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ZXMN10B08E6
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V (BR)DSS
I DSS
I GSS
100
0.5
100
V
A
nA
I D =250 A, V GS =0V
V DS =100V, V GS =0V
V GS = 20V, V DS =0V
I =250 A, V DS = V GS
Gate-Source Threshold Voltage
V GS(th)
1.0
3.0
V
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.230
0.300
0.500
V GS =10V, I D =1.6A
V GS =4.5V, I D =1.4A
V GS =4.3V, I D =1.1A
Forward Transconductance (1)(3)
g fs
4.8
S
V DS =15V,I D =1.6A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
497
29
18
pF
pF
pF
V DS =50 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
2.1
12.1
5.0
5.0
9.2
1.7
2.5
ns
ns
ns
nC
nC
nC
nC
V DD =50V, I D =1.0A
R G ? 6.0 , V GS =10V
V DS =50V,V GS =5V,
I D =1.6A
V DS =50V,V GS =10V,
I D =1.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.85
32.0
40.0
0.95
V
ns
nC
T J =25°C, I S =2.0A,
V GS =0V
T J =25°C, I F =1.7A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width = 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
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